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COMPONENT ENGINEERING / RF AMPLIFICATION

Broadband RF Power
Amplifier Modules

Module-level RF amplification for communications, laboratory testing and industrial research. Explore the product family, understand GaN and LDMOS technology paths, and discuss a configuration around your system.

  • GaN / LDMOS technology
  • Module-level integration
  • Project-based customization
PRODUCT PHOTOGRAPH / MODULE VIEW
Broadband RF power amplifier module in its metal enclosure, product photograph
A closer look at the module form factor.Enclosure and interface arrangements vary across the family.
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RF MODULES / MODEL SELECTION

Model selection reference

Browse 22 reference entries and open each independent model page. The reference numbers preserve the supplied list's order; they are not confirmed commercial model codes.

22 of 22 entries shown

Scroll horizontally within the table, or focus this region and use the arrow keys, to compare every field.

Model selection reference — 22 entries shown
Reference modelFrequency referenceBandwidth referencePower referenceTransistor technologyRF connectorWeight referenceDimensions referenceRecord statusDetails
Reference model 015–6 GHz1 GHz10-30 WGaNSMA → SMA273 g132 × 53 × 18 mmRecorded fieldsView model details
Reference model 021.2 GHz 1.5 GHz 2.4 GHzLower-band bandwidth200 MHz (e.g.700–900 MHz) Upper-band bandwidth300 MHz (e.g.2–2.3 GHz)50 WLDMOSSMA → N556 g179.6 × 66.91 × 22 mmRecorded fieldsView model details
Reference model 033–4 GHz 4–5 GHz 5–6 GHz 3–6 GHzBandwidth1 GHz Bandwidth3 GHz50 WGaNSMA → NNot provided — confirm203.5 × 90 × 24 mmConfirmation requiredView model details
Reference model 04100–1000 MHzBandwidth1 GHz100 WLDMOS (new revision)SMA → N1020 g175.5 × 100 × 24 mmRecorded fieldsView model details
Reference model 051–2 GHz 2–3 GHz 1–3 GHzBandwidth1 GHz Bandwidth3 GHz100 WGaNSMA → N1048 g200.5 × 105 × 24 mmRecorded fieldsView model details
Reference model 06Conflicting records — confirm
Summary record
4–6 GHz
Individual record
4–6.3 GHz
Conflicting records — confirm
Summary record
200 MHz
Individual record
Lower-band bandwidth500 MHz e.g. (4–4.5 GHz 4.5–5 GHz) Upper-band bandwidth1 GHz e.g. (5–6 GHz)
100 WGaNSMA → N700 g175 × 84 × 24 mmConfirmation requiredView model details
Reference model 07Conflicting records — confirm
Summary record
400-1000-2000
Individual record
100–1000 MHz 1–3 GHz Revision 1
Conflicting records — confirm
Summary record
500 MHz
Individual record
Bandwidth1 GHz e.g. 100–1000 MHz 1–2 GHz 2–3 GHz
30 WGaNSMA → SMA295 g160 × 50 × 20 mmConfirmation requiredView model details
Reference model 08100–1000 MHz 1–3 GHz Revision 2Notation requires confirmation
Summary record
100-1000-30 W, 1000-3000-20-30 W
Individual record
100-1000-30 W, 1000-3000-20-30 W
30 WGaNSMA → SMA396 g162.65 × 52.5 × 20 mmConfirmation requiredView model details
Reference model 093–6 GHz1 GHz / 2 GHz / 3 GHz30-40 WGaNSMA → SMA294 g160 × 50 × 19 mmConfirmation requiredView model details
Reference model 10100 MHz-2.4 GHzBandwidth300–400 MHz50 WGaNSMA → N425 g155 × 58 × 22 mmRecorded fieldsView model details
Reference model 11Conflicting records — confirm
Summary record
2–6 GHzRevision 1
Individual record
3–6 GHz
Conflicting records — confirm
Summary record
4 GHz
Individual record
3 GHz
Conflicting records — confirm
Summary record
50/100 W
Individual record
100 W
GaNSMA → N1351 g220 × 110 × 26 mmConfirmation requiredView model details
Reference model 12300 MHz-2 GHz Revision 21.7 GHz100 WGaNSMA → NNot provided — confirm240 × 118 × 25 mmConfirmation requiredView model details
Reference model 13Notation requires confirmation
Summary record
100–1 GHz
Individual record
100–1 GHz
900 MHzConflicting records — confirm
Summary record
100 W
Individual record
50-100 W
GaNSMA → N880 g200 × 100 × 20 mmConfirmation requiredView model details
Reference model 141–2 GHzBandwidth1 GHz80 WGaNSMA → SMA724 g200 × 100 × 20 mmConfirmation requiredView model details
Reference model 151–6 GHz 1–6.2 GHz Revision 2 power claim requires validationBandwidth5 GHz100 WGaNSMA → N1830 g250 × 150 × 25 mmConfirmation requiredView model details
Reference model 164–8 GHz Revision 24 GHz50 WGaNSMA → SMAConflicting records — confirm
Summary record
770 g
Individual record
439 g
Conflicting records — confirm
Summary record
180 × 100 × 20 mm
Individual record
134 × 80 × 22 mm
Confirmation requiredView model details
Reference model 171–3 GHz2 GHz50 WGaNSMA → N977 g220 × 77 × 24 mmConfirmation requiredView model details
Reference model 18Conflicting records — confirm
Summary record
1–6.4 GHz 500–7.3 GHz
Individual record
1–6.4 GHz 500 MHz-7.3 GHz
Not provided — confirmVariant rating requires confirmation
Summary record
10 W
Individual record
10 W / 20 W variants mentioned; confirm the applicable record
GaNSMA → SMA silver-plated connectors278 g105 × 60 × 20 mmConfirmation requiredView model details
Reference model 194–8 GHz4 GHz100 WGaNConflicting records — confirm
Summary record
SMA → SMA
Individual record
SMA → SMA/N
1193 g160 × 160 × 25 mmConfirmation requiredView model details
Reference model 202–7.2 GHz5.2 GHz50 WGaNConflicting records — confirm
Summary record
SMA → SMA
Individual record
SMA → N
Not provided — confirm160 × 160 × 25 mmConfirmation requiredView model details
Reference model 212–7.2 GHz5.2 GHz100 WGaNSMA → SMA2569 g240 × 220 × 25 mmRecorded fieldsView model details
Reference model 22Notation requires confirmation
Summary record
100-400
Individual record
100-400
Conflicting records — confirm
Summary record
400 MHz
Individual record
400
Conflicting records — confirm
Summary record
150 W
Individual record
200 W
GaNN778 g226 × 74 × 22 mmConfirmation requiredView model details

For lawful civilian communications, laboratory equipment and industrial research. These records are not installation instructions, interference settings, a safety assessment or a certification claim. The original workbook and internal engineering notes are not public downloads.

01 / THE MODULE APPROACH

A building block, not a black box system.

An RF power amplifier increases the power of an incoming radio-frequency signal. A module packages that amplification stage for integration into a larger piece of equipment, rather than replacing the complete system.

01

Broadband design approach

Broadband amplification supports a span of RF signals within a module’s intended operating range. The family offers different design paths; one module should not be assumed to cover every application.

02

Device technology choices

GaN and LDMOS provide different foundations for an amplifier design. The useful comparison is how the complete module fits the intended signal and equipment—not the semiconductor name alone.

03

Integration-led packaging

The module format brings the amplifier into a defined physical assembly. Enclosure layout, connection access and the host equipment’s mechanical arrangement are practical parts of a product discussion.

04

A clear customization path

Start with the civilian use case and the surrounding equipment. Discuss mechanical fit, interface arrangements and the support needed to turn an initial concept into an agreed project scope.

02 / PRODUCT FAMILY

One category. Different module formats.

The product family brings together several enclosure shapes and connection layouts. Explore the physical formats as a starting point for engineering and purchasing discussions.

PRODUCT FAMILY / MODULE FORMATS
Product-family photograph showing RF amplifier modules in different enclosure formats
On smaller screens, swipe or use the arrow keys in the image region to see the full family.

Physical format

Different enclosure proportions can suit different equipment layouts.

Connection layout

Interface placement is a distinct part of each module’s integration context.

Project fit

Use the family as a starting point, then discuss a specific assembly with the team.

03 / TECHNOLOGY OPTIONS

Two semiconductor paths. A system-level choice.

GaN and LDMOS refer to the transistor technology inside an amplifier. Neither label, on its own, describes the performance of a finished module.

01

GaN

Gallium nitride

A compound-semiconductor technology used in RF power devices. It is often considered where compact RF power stages and broadband design are important to the equipment concept.

Discussion lens: the intended signal, physical packaging and overall equipment requirements.
02

LDMOS

Laterally diffused metal-oxide-semiconductor

A silicon transistor technology with a long-established role in RF amplification. It offers another design path for communications equipment and other RF systems.

Discussion lens: the communications use case, existing equipment architecture and project priorities.

Compare complete module designs in the context of your application; technology labels are not a universal ranking.

04 / CIVILIAN APPLICATIONS

From connected equipment to the research bench.

Three civilian contexts in which a dedicated RF amplification stage can be part of the wider equipment design.

CONNECTED SYSTEMS

Communications

RF amplification within communications equipment and wireless development platforms. A module can form one stage of a transmit chain, alongside the equipment’s other signal-handling components.

MEASUREMENT CONTEXT

Laboratory & test

Amplification of laboratory signal sources for RF experiments and equipment evaluation. The amplifier belongs within the lab’s complete measurement setup and test plan.

APPLIED DEVELOPMENT

Industrial research

RF subsystems for industrial instrumentation research and prototype equipment. Module-level packaging lets teams consider the amplifier alongside the wider mechanical and electronic assembly.

05 / CUSTOMIZATION SCOPE

Shape the conversation around your equipment.

Customization starts with understanding the host product and the purpose of its RF stage. These are the areas to bring into an initial discussion with New Ark.

Enclosure & mechanical fit
Available space, the surrounding assembly and how the module needs to fit within the host equipment.
Interfaces & connection layout
Connection access, interface expectations and the boundaries between the module and the rest of the equipment.
Technology & product scope
The intended civilian application and whether a GaN or LDMOS design path belongs in the product review.
Documentation & support
The module information, review records and engineering coordination your team needs for its project.

Module-specific enclosure, interface and support arrangements are confirmed in the written project scope.

06 / COMMON QUESTIONS

Before you start a module discussion.

Is this a standalone RF instrument or a module?

This category covers amplifier modules intended to become part of larger equipment. An enclosure does not make a module a complete laboratory instrument or communications system; the surrounding equipment and integration responsibilities still matter.

What is the difference between GaN and LDMOS?

GaN means gallium nitride; LDMOS means laterally diffused metal-oxide-semiconductor. They are different transistor technologies used in RF power amplification. A suitable choice depends on the complete module design and application, rather than one technology being universally better.

Are these passive amplifier modules?

No. An RF power amplifier needs an external electrical supply and is an active electronic device. The word “passive” does not correctly describe powered amplification, even if a module has no extra control or monitoring features.

What should I share for a customization discussion?

Start with your civilian application, the module’s role in your equipment, the available mechanical space and the interface or documentation questions you want to resolve. The custom project team can coordinate the next review; the agreed configuration and support belong in the written scope.

07 / CONSULTATION

The right conversation, with the right team.

Choose a contact based on what you need to discuss. All three links open WhatsApp directly—no registration or enquiry form required.

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