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RF MODULES / PRODUCT INFORMATION

Solid-State RF Power Amplifiers (SSPA)

Solid-state RF power amplifiers use semiconductor devices rather than vacuum tubes to increase RF signal power. New Ark’s catalogue is a reference set for civilian component and product-documentation review: it includes GaN and LDMOS-labelled records, but a device label is not by itself proof of a complete SSPA, certified instrument, measured performance, or application suitability.

Category reference photo — not a verified image of this model
RF amplifier module category reference photograph
A closer look at the module form factor.Enclosure and interface arrangements vary across the family.

01 / Solid-state RF amplifiers

What “solid-state” means

In this context, solid-state means that the amplifying element is semiconductor-based. GaN, or gallium nitride, is a compound-semiconductor technology; LDMOS is laterally diffused metal-oxide semiconductor technology. Both can appear in RF transistors, integrated devices, or packaged assemblies. The technology name describes the active device approach, not every other part of a finished amplifier.

A complete SSPA or module may also require matching networks, thermal paths, connectors, enclosure work, protection, control, and supplier documentation. Those boundaries matter when comparing a transistor, a populated module, and a finished instrument. The catalogue records below should therefore be read as documented reference entries, not as a blanket reliability, efficiency, or output guarantee.

02 / Solid-state RF amplifiers

How to read the New Ark catalogue

The 22 approved records are technology-labelled GaN or LDMOS entries. Documented examples include reference 01 at 5–6 GHz and 10–30 W, reference 02 at listed 1.2, 1.5, and 2.4 GHz points with 50 W LDMOS, reference 04 at 100–1000 MHz with 100 W LDMOS (new revision), and reference 15 at 1–6 GHz or 1–6.2 GHz with a 100 W label and a power-validation note. These are catalogue fields, not independent test results.

The wider set includes 1–3 GHz, 3–6 GHz, 4–8 GHz, and 2–7.2 GHz records, plus narrower or multi-variant entries. Reference 06 retains conflicting 4–6 versus 4–6.3 GHz and bandwidth values; reference 16 retains conflicting weight and dimensions; reference 18 has conflicting frequency records and an unclear 10 W/20 W variant; reference 22 retains conflicting 150 W/200 W and feature fields. Missing, unclear, and revision-marked values require confirmation rather than silent normalization.

03 / Solid-state RF amplifiers

Module packaging and documentation

Packaging fields help establish what should be reviewed before a procurement or integration discussion. The catalogue records connector formats such as SMA → SMA, SMA → N, and N, with listed dimensions and weights where supplied. Some entries list a circulator, while others say none is listed; that field does not establish an internal design for every variant. A connector or enclosure measurement also does not prove the electrical interface, cooling provision, or complete system boundary.

A useful document set should identify the exact record and revision, frequency notation, bandwidth definition, power-rating basis, mechanical drawing, interfaces, and any missing fields. It should also separate supplier data from independent characterization. Keysight’s civilian measurement documentation treats high-power amplifier characterization as a distinct verification activity, while an SSPA catalogue label alone does not constitute that measurement record.

04 / Solid-state RF amplifiers

Civilian review and scope discipline

For civilian communications, scientific, industrial, or laboratory discussions, begin with the exact component boundary and the documents needed for the buyer’s review. A requested band that is not explicitly represented in the approved catalogue remains a feasibility scope, not a supplied module. Frequency overlap must not be used to infer an application match, and a nominal wattage must not be read as continuous measured output, waveform behaviour, or suitability for a particular system.

Certification and laboratory claims require their own evidence. ILAC explains that accreditation evaluates conformity-assessment bodies for specific activities and that laboratory competence is tied to defined scopes; this is different from a semiconductor technology label or a supplier catalogue entry. New Ark’s page therefore provides civilian product-navigation information only: it does not claim a factory, stock, lead time, certification, customer deployment, or performance guarantee.

SOURCE RECORDS / COMPARISON ONLY

Compare supplied reference records

The cards below reproduce the specifically linked supplier reference records. They are not a list of suitable or available products. Reference numbers are not confirmed commercial model codes; every field and applicable revision requires written confirmation.

Units and source notation are retained where stated. An uncertain or missing unit is not inferred.

Reference model 01

Recorded fields
Frequency referenceRecorded
5–6 GHz
Bandwidth referenceRecorded
1 GHz
Power referenceRecorded
10-30 W
Transistor technologyRecorded
GaN
View model details

Reference model 02

Recorded fields
Frequency referenceRecorded
1.2 GHz 1.5 GHz 2.4 GHz
Bandwidth referenceRecorded
Lower-band bandwidth200 MHz (e.g.700–900 MHz) Upper-band bandwidth300 MHz (e.g.2–2.3 GHz)
Power referenceRecorded
50 W
Transistor technologyRecorded
LDMOS
View model details

Reference model 03

Confirmation required
Frequency referenceRecorded
3–4 GHz 4–5 GHz 5–6 GHz 3–6 GHz
Bandwidth referenceRecorded
Bandwidth1 GHz Bandwidth3 GHz
Power referenceRecorded
50 W
Transistor technologyRecorded
GaN
View model details

Reference model 04

Recorded fields
Frequency referenceRecorded
100–1000 MHz
Bandwidth referenceRecorded
Bandwidth1 GHz
Power referenceRecorded
100 W
Transistor technologyRecorded
LDMOS (new revision)
View model details

Reference model 05

Recorded fields
Frequency referenceRecorded
1–2 GHz 2–3 GHz 1–3 GHz
Bandwidth referenceRecorded
Bandwidth1 GHz Bandwidth3 GHz
Power referenceRecorded
100 W
Transistor technologyRecorded
GaN
View model details

Reference model 06

Confirmation required
Frequency referenceConflicting records
Conflicting records — confirm
Summary record
4–6 GHz
Individual record
4–6.3 GHz
Bandwidth referenceConflicting records
Conflicting records — confirm
Summary record
200 MHz
Individual record
Lower-band bandwidth500 MHz e.g. (4–4.5 GHz 4.5–5 GHz) Upper-band bandwidth1 GHz e.g. (5–6 GHz)
Power referenceRecorded
100 W
Transistor technologyRecorded
GaN
View model details

Reference model 07

Confirmation required
Frequency referenceConflicting records
Conflicting records — confirm
Summary record
400-1000-2000
Individual record
100–1000 MHz 1–3 GHz Revision 1
Bandwidth referenceConflicting records
Conflicting records — confirm
Summary record
500 MHz
Individual record
Bandwidth1 GHz e.g. 100–1000 MHz 1–2 GHz 2–3 GHz
Power referenceRecorded
30 W
Transistor technologyRecorded
GaN
View model details

Reference model 08

Confirmation required
Frequency referenceRecorded
100–1000 MHz 1–3 GHz Revision 2
Bandwidth referenceNotation / version unclear
Notation requires confirmation
Summary record
100-1000-30 W, 1000-3000-20-30 W
Individual record
100-1000-30 W, 1000-3000-20-30 W
Power referenceRecorded
30 W
Transistor technologyRecorded
GaN
View model details

Reference model 09

Confirmation required
Frequency referenceRecorded
3–6 GHz
Bandwidth referenceRecorded
1 GHz / 2 GHz / 3 GHz
Power referenceRecorded
30-40 W
Transistor technologyRecorded
GaN
View model details

Reference model 10

Recorded fields
Frequency referenceRecorded
100 MHz-2.4 GHz
Bandwidth referenceRecorded
Bandwidth300–400 MHz
Power referenceRecorded
50 W
Transistor technologyRecorded
GaN
View model details

Reference model 11

Confirmation required
Frequency referenceConflicting records
Conflicting records — confirm
Summary record
2–6 GHzRevision 1
Individual record
3–6 GHz
Bandwidth referenceConflicting records
Conflicting records — confirm
Summary record
4 GHz
Individual record
3 GHz
Power referenceConflicting records
Conflicting records — confirm
Summary record
50/100 W
Individual record
100 W
Transistor technologyRecorded
GaN
View model details

Reference model 12

Confirmation required
Frequency referenceRecorded
300 MHz-2 GHz Revision 2
Bandwidth referenceRecorded
1.7 GHz
Power referenceRecorded
100 W
Transistor technologyRecorded
GaN
View model details

Reference model 13

Confirmation required
Frequency referenceNotation / version unclear
Notation requires confirmation
Summary record
100–1 GHz
Individual record
100–1 GHz
Bandwidth referenceRecorded
900 MHz
Power referenceConflicting records
Conflicting records — confirm
Summary record
100 W
Individual record
50-100 W
Transistor technologyRecorded
GaN
View model details

Reference model 14

Confirmation required
Frequency referenceRecorded
1–2 GHz
Bandwidth referenceRecorded
Bandwidth1 GHz
Power referenceRecorded
80 W
Transistor technologyRecorded
GaN
View model details

Reference model 15

Confirmation required
Frequency referenceRecorded
1–6 GHz 1–6.2 GHz Revision 2 power claim requires validation
Bandwidth referenceRecorded
Bandwidth5 GHz
Power referenceRecorded
100 W
Transistor technologyRecorded
GaN
View model details

Reference model 16

Confirmation required
Frequency referenceRecorded
4–8 GHz Revision 2
Bandwidth referenceRecorded
4 GHz
Power referenceRecorded
50 W
Weight referenceConflicting records
Conflicting records — confirm
Summary record
770 g
Individual record
439 g
Transistor technologyRecorded
GaN
Dimensions referenceConflicting records
Conflicting records — confirm
Summary record
180 × 100 × 20 mm
Individual record
134 × 80 × 22 mm
View model details

Reference model 17

Confirmation required
Frequency referenceRecorded
1–3 GHz
Bandwidth referenceRecorded
2 GHz
Power referenceRecorded
50 W
Transistor technologyRecorded
GaN
View model details

Reference model 18

Confirmation required
Frequency referenceConflicting records
Conflicting records — confirm
Summary record
1–6.4 GHz 500–7.3 GHz
Individual record
1–6.4 GHz 500 MHz-7.3 GHz
Bandwidth referenceNot provided
Not provided — confirm
Power referenceNotation / version unclear
Variant rating requires confirmation
Summary record
10 W
Individual record
10 W / 20 W variants mentioned; confirm the applicable record
Transistor technologyRecorded
GaN
View model details

Reference model 19

Confirmation required
Frequency referenceRecorded
4–8 GHz
Bandwidth referenceRecorded
4 GHz
Power referenceRecorded
100 W
RF connectorConflicting records
Conflicting records — confirm
Summary record
SMA → SMA
Individual record
SMA → SMA/N
Transistor technologyRecorded
GaN
View model details

Reference model 20

Confirmation required
Frequency referenceRecorded
2–7.2 GHz
Bandwidth referenceRecorded
5.2 GHz
Power referenceRecorded
50 W
RF connectorConflicting records
Conflicting records — confirm
Summary record
SMA → SMA
Individual record
SMA → N
Transistor technologyRecorded
GaN
View model details

Reference model 21

Recorded fields
Frequency referenceRecorded
2–7.2 GHz
Bandwidth referenceRecorded
5.2 GHz
Power referenceRecorded
100 W
Transistor technologyRecorded
GaN
View model details

Reference model 22

Confirmation required
Frequency referenceNotation / version unclear
Notation requires confirmation
Summary record
100-400
Individual record
100-400
Bandwidth referenceConflicting records
Conflicting records — confirm
Summary record
400 MHz
Individual record
400
Power referenceConflicting records
Conflicting records — confirm
Summary record
150 W
Individual record
200 W
Other functionsConflicting records
Conflicting records — confirm
Summary record
None listed
Individual record
Thermal control
Transistor technologyRecorded
GaN
View model details

DOCUMENTATION / READING CONTEXT

Sources and attributions

  1. RF | NXP Semiconductors

    NXP Semiconductors

  2. What You Need to Know About GaN Technology

    Qorvo

  3. High Power Amplifier Measurements Using Keysight VNAs

    Keysight Technologies

  4. About ILAC

    International Laboratory Accreditation Cooperation (ILAC)

  5. ILAC MRA and Signatories

    International Laboratory Accreditation Cooperation (ILAC)

Sources support the topic discussion; they do not independently validate the supplied module records or establish project suitability.

PRODUCT TOPIC / COMMON QUESTIONS

Questions about this topic

Does solid-state mean the item is a complete SSPA?

No. It identifies semiconductor-based amplification. A complete SSPA or module needs a confirmed assembly boundary, interfaces, thermal and mechanical documentation, and applicable verification records.

Are all New Ark catalogue entries GaN?

No. The approved catalogue contains GaN and LDMOS labels. Reference 02 and reference 04 are labelled LDMOS; the other records are not thereby proven interchangeable or application-matched.

Can a listed frequency and wattage be treated as a guaranteed performance specification?

No. They are preserved catalogue fields. Some records have missing, unclear, revision, or conflicting values, and the page does not turn those fields into measured output, efficiency, reliability, or suitability guarantees.

Does an amplifier record prove certification or accredited testing?

No. Certification and accredited testing depend on the relevant product, test, laboratory, and scope documents. A component technology label and a catalogue record do not establish either one.

RF MODULES / PRODUCT INFORMATION

Catalogue and reference files

Open the RF catalogue, download the English Excel workbook or view all 22 independent reference records. Recorded values and revision differences still require confirmation.

07 / CONSULTATION

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